A model was developed for the description of B diffusion in poly-Si/Si structures. It took account of grain boundary motion, segregation of impurities to grain boundaries, differing diffusivities in the grains and the grain boundaries, and the effect of the interfacial oxide layer thickness upon the two-dimensional diffusion profile.

A.D.Sadovnikov, A.V.Tchernyaev: Solid-State Electronics, 1992, 35[2], 193-200