Point-defect models were compared with experimental data on intrinsically doped material. Transient dopant diffusion due to low-dose Si implantation damage could be modelled by using the same parameters as those used for oxidation-enhanced diffusion. This therefore provided an additional technique for monitoring point defect behavior. Consistent parameters were extracted for both experimental conditions, and were fitted to Arrhenius relationships. The theory of dopant-defect pairing was found to be crucial when modelling implantation damage effects. The effective binding energies for B-defect and P-defect pairs were determined experimentally.

H.Park, M.E.Law: Journal of Applied Physics, 1992, 72[8], 3431-9