Recent experimental data on B diffusion as a function of substrate concentration, under inert or oxidizing ambients, were interpreted in terms of a dual vacancy and interstitially mechanism. By also assuming that positively ionized vacancies and interstitials dominated the contribution of the corresponding neutral species, a simple model was developed which explained well the results obtained when B diffused alone or when it diffused in heavily P-doped Si. It was concluded that the interstitialcy component was limited to between 0.21 and 0.43. This revealed an important vacancy contribution to B diffusion.

D.Tsoukalas, P.Chenevier: Physica Status Solidi A, 1987, 100[2], 461-5