Two-dimensional distributions of implanted B, and implantation-induced displacement damage near to a mask edge, were used to calculate the two-dimensional redistribution of B which resulted from typical short-term annealing. The damage was removed, during annealing, by the release of vacancies which enhanced the diffusion of B. The effect was that B preferentially redistributed further into the bulk.

J.F.Marchiando, J.Albers: Journal of Applied Physics, 1987, 61[4], 1380-91