Modelling of the diffusion of high concentrations of implanted B was carried out. The normally accepted model, which assumed that the diffusivity of B was controlled by singly-charged donor vacancies, was shown to be inadequate for describing B profiles. Instead, a two-stream model (in which B movement was dominated by a dissociative process involving both interstitial and substitutional diffusion) was found to be in good agreement with the data.

O.W.Holland: Applied Physics Letters, 1989, 54[9], 798-800