It was found that there was a striking agreement between theory and experiment with regard to the behavior of p-type dopants. Group-III species exhibited retarded diffusion when they were interstitial, and exhibited enhanced diffusion when they were substitutional. The theoretical and experimental results indicated that the presence of large quantities of Ge, when completely integrated into Si, altered the molecular orbital structure of the lattice to such a degree that large long-range effects were exerted upon p-type dopant species. It was concluded that interactions between p-type dopants, and interactions with Ge, could be used to define and alter diffusion patterns.

S.Aronowitz, C.Hart, S.Myers, P.Hale: Journal of the Electrochemical Society, 1991, 138[6], 1802-6