A computer study was made of the accelerated diffusion of impurities which were introduced by high-temperature implantation. The diffusion equations were solved by using the finite difference method. It was assumed that the acceleration was due to the presence of an excess of point defects, and was proportional to their change in concentration with depth. The calculated profiles were compared with data on the implantation of B (at 900C) to doses of between 3 x 1013 and 1016/cm2. Agreement with experimental data was obtained at all doses only if the point defect diffusion length was reduced upon approaching the ion deceleration region. This was due to the fact that deeply penetrating B atoms acted as sinks for point defects, and thus reduced their diffusion length.

L.N.Aleksandrov, T.V.Bondareva, G.A.Kachurin, I.E.Tyschenko: Fizika i Tekhnika Poluprovodnikov, 1991, 25[2], 227-30 (Soviet Physics - Semiconductors, 1991, 25[2], 137-9)