An accurate simulation of the enhanced diffusion of B during rapid thermal annealing was obtained by incorporating the effects of extended defect formation and annealing into a multi-zone semi-empirical model. The multi-zone model involved the division of the implantation profile into 3 zones which defined regions of differing defects and diffusion enhancement. The model also included the initial enhanced diffusion and transient diffusion effects which were associated with the dissolution of defect clusters and with the annealing of extended defects, respectively. The saturation time for transient enhanced diffusion involved an exponential function of implantation dose so as to model the increase in point defect which was generated by higher doses. The model accurately simulated the B diffusion profile over wide range of doses, and also reproduced the immobile peak of precipitated dopant which was produced by high-dose implantation.

H.Kinoshita, G.Q.Lo, D.L.Kwong, S.Novak: Journal of the Electrochemical Society, 1993, 140[1], 248-52