The transient diffusion behavior of B during rapid thermal annealing was simulated by modifying a recently developed pair diffusion model. The B was assumed to reside on interstitial sites after ion implantation, and to form B-interstitial pairs. Decay to form substitutional B, plus interstitials, began upon increasing the temperature. Implantation damage was taken into account by the model, which also allowed for a temperature dependence of the transient diffusion effect.

M.Heinrich, M.Budil, H.W.Pötzl: Journal of Applied Physics, 1991, 69[12], 8133-8