The effect of thermal oxidation upon the diffusion of Bi was investigated. The diffusion coefficients of Bi during drive-in were determined from the best-fitted parameters to numerical simulations of the experiments. It was found that the diffusion of Bi was retarded by the thermal oxidation of Si. The degree of retardation was less than that of Sb, and the oxidation time dependence of the retardation was more marked than that of Sb. These contradictions suggested that the diffusion mechanism of Bi might not involve a simple dual mechanism.

Y.Ishikawa, I.Kobayashi, I.Nakamichi: Japanese Journal of Applied Physics, 1990, 29[10], L1929-31