The out-diffusion behavior of C from heat-treated Czochralski material was investigated by using secondary ion mass spectroscopy. In C-doped material, the diffusion of C was greatly enhanced at 750C, but was significantly retarded at 1000C. The retarded diffusion was tentatively attributed to the formation of slow-diffusing complexes such as Si-O-C.

F.Shimura, T.Higuchi, R.S.Hockett: Applied Physics Letters, 1988, 53[1], 69-71