The first observations of the atomic-scale structure of the (00•1) surface, in a metal-organic chemical vapor deposition environment, were reported. Measurements were performed by means of in situ grazing-incidence X-ray scattering. The surface equilibrium phase diagram was determined as a function of the temperature and ammonia partial pressure. It contained 2 phases, with 1 x 1 and (v3 x 2v3)R30º symmetries. The latter phase was found to have a novel so-called missing-row structure, from which one third of the surface Ga atoms were absent.

Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment. A.Munkholm, G.B.Stephenson, J.A.Eastman, C.Thompson, P.Fini, J.S.Speck, O.Auciello, P.H.Fuoss, S.P.DenBaars: Physical Review Letters, 1999, 83[4], 741-4