The annealing of supersaturated Co in n-type dislocation-free (111) float-zone wafer samples with a P content of 1014/cm3 was studied by measuring the Co depth profile at 1100C. The results suggested that the diffusion of electrically active Co was controlled mainly by the interstitial Co content and could be described approximately by means of a simple diffusion equation.

K.Hashimoto, H.Nakashima, K.Hashimoto: Japanese Journal of Applied Physics, 1988, 27[9], 1776-7