The diffusion parameters of Cu were determined in profiled Cu samples, that had been prepared by using the Stepanov method, at temperatures ranging from 900 to 1050C. It was found that the data (table 29) could be described by:

D(cm2/s) = 0.015 exp[-0.86(eV)/kT]

K.P.Abdurakhmanov, M.B.Zaks, V.V.Kasatkin, G.S.Kulikov, S.K.Persheev, K.K.Khodzhaev: Fizika i Tekhnika Poluprovodnikov, 1989, 23[10], 1891-3 (Soviet Physics - Semiconductors, 1989, 23[10], 1170-1)

Table 29

Diffusion of Cu in Si