The suppression of <100> dark-line defect growth in quantum well lasers on Si substrates that had been grown by means of metalorganic chemical vapor deposition was investigated. An AlGaAs/Ga0.98In0.02As laser on Si, with a Ga0.92In0.08As intermediate layer, was found to have a stress-relieved active layer, whereas an AlGaAs/Ga0.93In0.07As laser on Si, with an Ga0.92In0.08As intermediate layer had a compressive stress-induced active layer. The AlGaAs/Ga0.93In0.07As laser had a higher threshold current density than that of the AlGaAs/Ga0.98In0.02As laser. This was attributed to an increased bending of threading dislocations in the active layer.

Y.Hasegawa, T.Egawa, T.Jimbo, M.Umeno: Japanese Journal of Applied Physics, 1996, 35[1-11], 5637-41