The formation of V-related defects and complexes in material which had been co-doped with Zn and V was studied by using electron paramagnetic resonance techniques. It was found that, whereas only the V3+ defect was observed in Zn-free crystals and only a V2+-X complex was detected in ZnCdTe with 5 or 10%Zn, both defects were observed simultaneously at thermal equilibrium in co-doped samples with a low (1019/cm3) Zn concentration. Secondary ion mass spectrometric impurity analysis did not reveal contamination at the 1017/cm3 level, and second-nearest neighbor complexes, VCd-ZnCd, were suggested to be present. On the other hand, the concentration of the VCd-ZnCd defects was much higher than was expected on the basis of the statistical distribution of Zn and V.

J.C.Launay, T.Arnoux, H.J.Von Bardeleben: Semiconductor Science and Technology, 1997, 12[1], 47-50