Experiments were performed on buried Si-doped epilayers under hydrostatic pressure. It was found that the D diffusion profile in n-type Si-doped samples depended upon the hydrostatic pressure, and consisted of a plateau that was followed by a steep progressive decrease as the pressure was increased. This was explained as being due to an increasing importance of the trapping-detrapping process of H- on Si+ donors during H diffusion. This increase was attributed to a deepening of the H acceptor level, with respect to the bottom of the  conduction band, as the hydrostatic pressure was increased.

D.Machayekhi, J.Chevallier, D.Theys, J.M.Besson, G.Weill, G.Syfosse: Solid State Communications, 1996, 100[12], 821-4