Electrical re-activation of Mg, and the carrier profile distribution following rapid thermal annealing, were studied in samples which had been implanted with both 100keV Mg+ (to a dose of 1015/cm2) and with various doses and energies of P+. The main results were an enhancement of the electrical activation yield of Mg, and a reduction in profile redistribution, with increasing P dose. The coexistence of a high damage concentration level and of a P concentration that was similar to, or higher than, that of Mg were deduced to be the requirements for obtaining higher sheet carrier concentrations and shallower carrier profiles. The results were explained in terms of the effect of P implantation upon the concentration of point defects in the Ga sub-lattice.

J.P.De Souza, H.Boudinov, J.W.Swart: Nuclear Instruments and Methods in Physics Research B, 1996, 117[4], 403-7