The electrical properties, at 77 to 330K, of neutron-doped samples were studied during isochronal annealing at temperatures ranging from 90 to 210C by means of Hall-effect measurements. In addition to thermal annealing, some samples were subjected to ultrasound with a frequency of between 5 and 10MHz and a power density of 1W/cm2. It was found that ultrasound stimulated the low-temperature stage of the reverse annealing of radiation defects in neutron-doped material.

J.M.Olikh, N.I.Karas: Fizika i Tekhnika Poluprovodnikov, 1996, 30[8], 1455-9 (Semiconductors, 1996, 30[8], 765-7)