The implantation of B was used to create n-p photo-diodes in vacancy-doped material. The junction formed when Hg interstitials from the implantation-damaged region diffused into the HgCdTe and annihilated Hg vacancies. The resultant dopant profile was n+/n-/p, where the n+ region was near to the surface and coincided approximately with the implantation damage. The n- region corresponded to that in which the Hg vacancies had annihilated, and contained residual grown-in donors. The p-region remained doped with Hg-vacancy double-acceptors. A model was described in which the interstitial source in the damaged region was represented by stored interstitials whose distribution depended upon the implanted dose. These interstitials were assumed to be released into the bulk at a constant and controllable rate. Once released, they diffused away from the damaged region and annihilated any Hg vacancies that they encountered.

H.G.Robinson, D.H.Mao, B.L.Williams, S.Holander-Gleixner, J.E.Yu, C.R.Helms: Journal of Electronic Materials, 1996, 25[8], 1336-40