The behavior of Ag atoms at the interface between a deposited Si layer and a Si(111) surface was studied by using a new ion-scattering spectroscopic technique. During the room temperature deposition of Si, the Ag layer was anchored at the interface between amorphous and crystalline Si. With increasing annealing temperature, the Ag atoms were found to diffuse out over the adsorbed amorphous Si layer. The buried structure of the substrate was also reflected by the multiple scattering component of the ion-scattering spectrum.

K.Kawamoto, T.Mori, S.Kujime, K.Oura: Surface Science, 1996, 363[1-3], 156-60