Annealing effects were studied, in As-implanted (211)B films that had been grown by means of molecular beam epitaxy, by using resonant Raman scattering and photoluminescence spectroscopic techniques. The Raman intensity ratio of the 2LO and 1LO phonon modes, and the normalized bound-exciton emission intensity, indicated that superior removal of the implantation-induced damage was achieved upon increasing the annealing temperature to above 440C. On the other hand, the lattice perfection fell sharply when the annealing temperature was higher than 440C. It was found that, upon increasing the annealing temperature, more and more As atoms occupied Te sites as acceptors. The samples behaved in a p-type manner, with a decreasing compensation coefficient and an increasing hole concentration.

J.M.Zhang, S.C.Shen, S.P.Guo, S.X.Yuan: Journal of Physics D, 1996, 29[8], 2162-4