The effect of ion milling upon the defect structure of crystals was investigated by means of cathodoluminescence scanning electron microscopy. An enhancement of the luminescence intensity was detected after ion treatment. The luminescence spectra of treated and untreated zones of the samples indicated that ion milling caused the generation of Te vacancies and the filling of Cd vacancies in a sub-surface layer. Also, an enhancement of the concentration of Cd vacancy-related defects in a region which extended up to 20 from the layer was revealed.

G.Panin, P.Fernandez, J.Piqueras: Semiconductor Science and Technology, 1996, 11[9], 1354-7