Persistent photoconductivity and Hall effect measurements of Cl-doped Cd1-xZnxTe material indicated that the Cl donors formed several distinct deep DX states which were consistent with published calculations. When x was equal to 0.20, only one DX state was evident, which had a deep binding energy of 0.22eV. The persistent photoconductivity exhibited a single annealing transition at 130K. At an x-value of 0.28, the persistent photoconductivity underwent distinct transitions at 100 and 190K. A model was proposed in which the presence of a second metastable state, DX’, appreciably increased the latter temperature. When x was equal to 0.28, DX’ lay at 0.23eV below the conduction band but the deepest binding energy was 0.40eV. The rapid increase in the latter, as a function of x, explained the difficulty of obtaining n-type ZnTe by using Cl as a dopant.

T.Thio, J.W.Bennett, P.Becla: Physical Review B, 1996, 54[3], 1754-8