The stresses which were generated at the GaAs/SiO2 interface during annealing were investigated by means of laser Raman spectroscopy. It was found that compressive stresses existed at the surface of the GaAs after annealing, and that these increased with increasing SiO2 cap layer thickness. The compressive stress on the GaAs was generated during annealing and was attributed to the difference in the thermal expansion coefficients of GaAs and SiO2. The increase in compressive stress on the surface of GaAs decreased the diffusion coefficient of Sn in the GaAs. This was due to a reduction in the number of Ga vacancies in the compressively stressed sample, as compared with the equilibrium Ga vacancy content of an unstressed sample.

A.B.M.Harun-ur Rashid, M.Kishi, T.Katoda: Journal of Applied Physics, 1996, 80[6], 3540-5

Memorandum: Sn in GaAs

1060-1200C D(cm2/s) = 6 x 10-4 exp[-2.5(eV)/kT] (Journal of Applied Physics, 1961, 32, 1180); 900-1100C, D(cm2/s) = 3.8 x 10-2 exp[-2.7(eV)/kT] (Solid-State Electronics, 1963, 6, 383); 810-910C, D(cm2/s) = 3.78 x 106 exp[-4.35(eV)/kT] (Solid-State Electronics, 1974, 17, 35); 750-910C, D(cm2/s) = 10.9 exp[-2.95(eV)/kT] (Solid-State Electronics, 1974, 17, 35)800-1000C, D(cm2/s) = 1 x 10-5 exp[-2.0(eV)/kT] (Japanese Journal of Applied Physics, 1975, 14, 717)