The N partial pressure was used to control the O potential in the gaseous atmosphere, during liquid-encapsulated Czochralski growth, and thereby control the incorporation of O into the crystals. The dependence of the electrical properties upon the concentration of off-center O-on-As sites was investigated, and was analyzed in terms of the well-known EL3 center.

M.Müller, G.Gärtner, G.Hirt, M.Jurisch, A.Köhler, G.Müller, B.Weinert: Journal of Crystal Growth, 1996, 166, 636-40