The activation efficiencies of implanted Si, Be and C in GaAs0.93P0.07 were measured at annealing temperatures which ranged from 650 to 950C. It was found that the maximum activation efficiency of Be was about 60% for a dose of 5 x 1014/cm2, whereas that of C was an order of magnitude lower. Capless proximity annealing was adequate for surface preservation up to about 950C, as judged by means of scanning electron microscopy and atomic force microscopy. Photoluminescence measurements revealed that non-radiative damage-related point defects remained even after annealing at 950C.

J.W.Lee, K.N.Lee, S.J.Pearton, C.R.Abernathy, W.S.Hobson, H.Han, J.C.Zolper: Journal of Applied Physics, 1996, 80[4], 2296-9