A study was made of <100>-oriented misfit dislocations, in Ga0.94In0.06As/GaAs heterostructures with a relatively low misfit (0.0043), by means of synchrotron radiation topography. The GaInAs samples consisted of 250-, 400- or 650nm-thick layers which had been grown by means of molecular beam epitaxy at 580C. All of the topographs were obtained by means of synchrotron radiation double-crystal topography, and the panchromatic cathodoluminescence complementary technique of scanning electron microscopy was also used. Misfit dislocations were observed which lay along both <100> and <110> directions. It was noted that those which were parallel to <100> directions had a much lower density and greater length than did those which lay along <110> directions.

W.Zeng, S.S.Jiang, C.Ferrari, S.Gennari, G.Salviati: Journal of Applied Physics, 1996, 80[3], 1446-9