Deep levels in S-, Se- and Te-doped Ga0.82In0.18As0.28P0.72, which had been grown onto GaAs0.61P0.39 substrates by means of liquid phase epitaxy, were studied by using deep level transient spectroscopic and thermally stimulated capacitance techniques. The donor-related deep level activation energies were found to be 0.26, 0.23 and 0.14eV for S-, Se- and Te-doped GaInAsP, respectively. Persistent photoconductivity was observed in all of the doped samples. It was concluded that S, Se and Te donors formed DX centers in the GaInAsP.

H.K.Kwon, B.D.Choe, S.D.Kwon, H.Lim: Journal of Applied Physics, 1996, 80[7], 4211-3