Measurements were made of the effect of pressure upon As diffusion. Diffusion annealing of ion-implanted samples was carried out in a high-temperature diamond anvil cell; using liquid Ar as a hydrostatic pressure medium. It was found that, at 575C and pressures ranging from 0.1 to 4GPa, the pressure slightly enhanced the diffusivity. This was characterized by an activation volume of -1.7cm3/mol; or 12% of the atomic volume. The results cast doubt on the assumption that the diffusion of group-III, IV, and V elements was mediated entirely by vacancies. It was concluded that, if the diffusion of As was mediated entirely by vacancies, then either the vacancy formation volume was unexpectedly low or the energy required for vacancy migration was surprisingly high.

S.Mitha, M.J.Aziz, D.Schiferl, D.B.Poker: Applied Physics Letters, 1996, 69[7], 922-4

Memorandum: As in Ge

700-900C, D(cm2/s) = 0.71 exp[-2.21(eV)/kT] (Physical Review, 1952, 86, 136); 600-900C, D(cm2/s) = 12.7 exp[-2.3(eV)/kT] (Physical Review, 1954, 94, 1531); 700-900C, D(cm2/s) = 2.1 exp[-2.39(eV)/kT] (Zeitschrift für Naturforschung, 1955, 10a, 285); 700-900C, D(cm2/s) = 5.4 x 102 exp[-2.9(eV)/kT] (Zeitschrift für Naturforschung, 1959, 14a, 1031); 700-900C, D(cm2/s) = 3 exp[-2.43(eV)/kT] (Solid-State Electronics, 1961, 2, 85); 580-900C, D(cm2/s) = 1.5 exp[-2.39(eV)/kT] (Solid-State Electronics, 1962, 5, 98); 700-790C, D(cm2/s) = 10.3 exp[-57.4(kcal/mol)/RT] (Japanese Journal of Applied Physics, 1968, 7, 81)