Samples of Ge and Si were irradiated with 75MeV Ni+, Ge+ and Ag+, to fluences of between 1013 and 7 x 1014/cm2, at room temperature or liquid N temperatures. Samples of C were bombarded C+ ions (0.08 to 1.5MeV) to fluences of between 1013 and 1.5 x 1016/cm2 at liquid N temperatures. Reflection spectra and scanning electron microscopic images of the bombarded crystalline Si and Ge revealed surface morphological changes. In the case of Si, an absorption that was due to the formation of di-vacancies appeared at about 0.7eV. The absorption edge spectra, of diamond that had been bombarded with C+

ions, exhibited a fluence dependence of the ion-induced disorder and the crystal-amorphous transformation.

K.L.Bhatia, P.Singh, N.Kishore: Materials Science Forum, 1996, 223-224, 419-28

Compensation Chart: As in Ge

(vertical axis shifted by arbitrary factor)