A study was made of the molecular beam epitaxial growth of InAs onto GaP(001). This system involved the greatest (11%) lattice mismatch of all of the arsenides and phosphides. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy were used to optimize growth and characterize the epilayer. It was found that the growth mode could be controlled by the surface V/III ratio. Three-dimensional or 2-dimensional layer-by-layer growth occurred under As-stable and In-stable conditions, respectively. In both cases, a regular network of pure edge-type (90) misfit dislocations, with a spacing of 4nm, formed directly at the hetero-interface. This corresponded to 85% strain relaxation. The epilayers which had been grown under In-stable conditions had relatively smooth surfaces, with low threading dislocation densities. This was attributed to the fact that the interface misfit dislocations were all of edge-type. These had no threading component, and relieved the strain most effectively.

J.C.P.Chang, T.P.Chin, J.M.Woodall: Applied Physics Letters, 1996, 69[7], 981-3