Irradiation-induced defects in semi-insulating Fe-doped samples were studied by using a thermally stimulated current method. New peaks, with activation energies of 0.18, 0.39 and 0.52eV, were observed. On the basis of the annealing behavior of the defects, as observed using thermally stimulated current and photoluminescence methods, the 0.18eV peak (produced by a dose of 1016/cm2) was attributed to InP antisite defects that probably formed complexes. The 0.52eV peak (produced by doses of less than 1015/cm2) was associated with Frenkel-type defects which were the preceding stage in the creation of antisite defects. Some thermally stimulated current peaks appeared during annealing.

K.Kuriyama, K.Sakai, K.Ushiyama, M.Okada, K.Yokoyama: Solid State Communications, 1996, 100[6], 389-92