Samples were implanted with MeV Zn ions, at about 200C, to doses which ranged from 5 x 1014 to 1016/cm2. They were then investigated by using Rutherford back-scattering spectrometry and other techniques. The implantation-induced damage was characterized by the presence of mobile point defects at the implantation temperature. This resulted in the creation of damaged layers that contained point-like defects, but with no sign of amorphization. During rapid thermal annealing, the surface recovered channelling perfection to a depth that was equal to 60% of the projected range. At depths of up to twice the projected range, a band of extrinsic dislocation loops formed. It was deduced that nearly all of the Zn atoms occupied substitutional lattice sites in the as-implanted samples. During annealing, marked Zn diffusion occurred, together with lattice site changes.

H.Krause, R.H.Flagmeyer, J.Vogt, A.Kling, T.Butz: Nuclear Instruments and Methods in Physics Research B, 1996, 133[1-4], 209-13