In order to investigate the residual defect distribution in the implanted layers, photoluminescence excitation and Raman scattering studies were made of material, which had been implanted with 2MeV Yb+ ions and annealed (750C, 0.25h), as a function of chemical etching depths of up to 4.51 times the projected range of 410nm. The results were compared with those which were obtained from Rutherford back-scattering spectrometry channelling analysis. The optical experiments showed that 2 residual defective regions were present at depths of between 0.34 and 0.80 times the projected range, and at about 2.56 times the projected range. Rutherford back-scattering spectrometry channelling analysis revealed the existence only of the former region. It was concluded that so-called clamshell defects were present in the former region and that end-of-range defects were present in the latter region.

H.Katsumata, S.Uekusa, H.Sai, M.Kumagai: Journal of Applied Physics, 1996, 80[4], 2383-7