The damage which was introduced into Fe-doped material by the implantation of 1.0MeV P ions to doses which ranged from 5 x 1013 to 2 x 1015/cm2 was studied. The effects of rapid thermal annealing, at temperatures ranging from 700 to 1050C, were investigated by means of Raman scattering. A shift and asymmetrical broadening of the longitudinal optical phonon peak, and the appearance of a transverse optical mode, showed that the Raman scattering was very sensitive to implantation damage. At doses greater than 5 x

1014/cm2, the transverse optical and longitudinal optical phonon peaks markedly broadened, and even merged into a single peak; thus indicating the existence of an amorphous structure in the near-surface region. It was found that a lot of the primary damage could be annealed out, after rapid thermal annealing at 800C, for all implantation doses. During rapid thermal annealing at temperatures below 900C, the residual damage decreased with increasing annealing temperature in the case of low doses (1014/cm2), but increased in the case of high doses (2 x 1015/cm2). Only when the annealing temperature was greater than 900C did the residual defects markedly decrease in the high-dose case. Almost full recovery was obtained when the annealing temperature was increased to between 1000 and 1050C.

B.R.Shi, N.Cue, T.B.Xu, S.Au: Journal of Applied Physics, 1996, 80[4], 2127-31