Residual stresses in epitaxial InP on (001)Si were investigated by means of photo-reflectance spectroscopy. Depending upon the dopant concentration, low-field and intermediate-field spectra were measured and were quantitatively analyzed by using a third-derivative approximation or a multi-layer model, respectively. In addition to an energy shift that was due to the tensile strain which was caused by the differing thermal expansion coefficients of InP and Si, a signal component was found which originated from compressive strains in the InP. This was attributed to the clustering of dislocations at twin defects.

S.Mo, E.Peiner, A.Bartels, G.P.Tang, A.Schlachetzki, R.Kuzmenko, S.Hildebrandt, J.Schreiber: Japanese Journal of Applied Physics, 1996, 35[1-8], 4238-46