The effect of N co-implantation in suppressing B penetration into p+-type polycrystalline material was investigated. The co-implantation of N with BF2+ led to combination with B so as to form B-N complexes. This resulted in a retardation of the B diffusion.

T.S.Chao, M.C.Liaw, C.H.Chu, C.Y.Chang, C.H.Chien, C.P.Hao, T.F.Lei: Applied Physics Letters, 1996, 69[12], 1781-2

Memorandum: B in Si

1050-1350C, D(cm2/s) = 16 exp[-3.69(eV)/kT] (Journal of the Electrochemical Society, 1961, 108, 795); 1120-1335C, D(cm2/s) = 17.1 exp[-3.68(eV)/kT] (Journal of the Physical Society of Japan, 1960, 15, 1541); 1050-1350C, D(cm2/s) = 25 exp[-3.51(eV)/kT] (Journal of Applied Physics, 1960, 31, 303); 950-1275C, D(cm2/s) = 10.5 exp[-3.69(eV)/kT] (Journal of Applied Physics, 1956, 27, 544); 1000-1230C, D(cm2/s) = 2.02 exp[-3.52(eV)/kT] (Japanese Journal of Applied Physics, 1964, 3, 377); 1100-1270C, D(cm2/s) = 0.15 exp[-4.25(eV)/kT] (Japanese Journal of Applied Physics, 1968, 7, 1361); 700-1150C, D(cm2/s) = 6.0 x 10-7 exp[-1.68(eV)/kT] (Journal of the Electrochemical Society, 1969, 116, 1142); 1100-1250C, D(cm2/s) = 5.1 exp[-3.70(eV)/kT] (Japanese Journal of Applied Physics, 1969, 8, 1440); 1130-1405C, D(cm2/s) = 0.0021 exp[-2.85(eV)/kT] (Physical Review B, 1971, 3, 389); 850-950C, D(cm2/s) = 11.5 exp[-3.77(eV)/kT] (Physica Status Solidi A, 1971, 8, 71); 1100-1250C, D(cm2/s) = 2.46 exp[-3.59(eV)/kT] (Solid-State Electronics, 1972, 15, 1113); 1000-1200C, D(cm2/s) = 0.0322 exp[-3.02(eV)/kT] (Journal of the Electrochemical Society, 1974, 121, 705); 950-1200C, D(cm2/s) = 32.5 exp[-3.34(eV)/kT] (Solid-State Electronics, 1976, 19, 545); 986-1132C, D(cm2/s) = 1.37 exp[-3.59(eV)/kT] (Solid-State Electronics, 1980, 23, 1263); 1000-1200C, D(cm2/s) = 0.0003 exp[-2.1(eV)/kT] (Japanese Journal of Applied Physics, 1993, 32, 3872); 800-1000C, D(cm2/s) = 0.022 exp[-2.5(eV)/kT] (Journal of Applied Physics, 1991, 69, 2135); 1050-1100C, D(cm2/s) = 3 exp[-3.43(eV)/kT] (Semiconductor Science and Technology, 1992, 7, 181); 1050-1100C, D(cm2/s) = 0.9 exp[-3.43(eV)/kT] (Semiconductor Science and Technology, 1992, 7, 181); 800-950C, D(cm2/s) = 0.0012848 exp[-2.6950(eV)/kT] (Journal of Electronic Materials, 1993, 22, 1129); 800-950C, D(cm2/s) = 0.3362 exp[-3.4260(eV)/kT] (Journal of Electronic Materials, 1993, 22, 1129); 1000-1200C, D(cm2/s) = 0.0003 exp[-2.1(eV)/kT] (Japanese Journal of Applied Physics, 1993, 32, 3872)