The transient enhanced diffusion of dopants during short annealing treatments was investigated by using a buried B marker layer structure and various Si implantation doses and energies. It was found that the diffusion behavior of the marker layer indicated that diffusivity enhancement was essentially independent of the implantation conditions, for short annealing times, while the overall transient motion increased with increasing implantation. The data were explained by using an interstitial clustering model that took account of both cluster evaporation and cluster growth.

H.S.Chao, P.B.Griffin, J.D.Plummer, C.S.Rafferty: Applied Physics Letters, 1996, 69[14], 2113-5