Numerical simulations were made of the redistribution of B in Ar-implanted wafers. The original wafers had been uniformly doped with B. Redistribution of B atoms was observed for Ar doses of 1015/cm2, after annealing at 900 or 1000C. It was completely absent for low Ar doses. It was suggested that the excess self-interstitials which were generated by recrystallization of the amorphized layer were responsible for the

redistribution. The interaction of these excess self-interstitials with B atoms occurred via a kick-out mechanism in which a large number of mobile B species were produced at interstitial sites.

V.C.Lo, M.X.Pan, S.P.Wong, Y.W.Lam: Modelling and Simulation in Materials Science and Engineering, 1996, 4[2], 179-91

Compensation Chart: B in Si

(vertical axis shifted by arbitrary factor)