A geometrical approach was used to determine the planar defects which were introduced in the bulk by the interfacial structure. By considering a continuous stacking between the O and N frameworks of Al2O3 and GaN, the residual translation between islands was determined and compared with the translation of planar defects of the wurtzite structure. Under these conditions, a correlation was established between steps on the Al2O3 surface and planar defects (stacking faults, inversion domain boundaries) which were observed by means of high-resolution electron microscopy.

Analysis of the Interfacial Relationship in GaN/(0001)Al2O3 Layers. B.Barbaray, V.Potin, P.Ruterana, G.Nouet: Materials Science Forum, 1999, 294-296, 111-4