The surface segregation of these elements on molecular-beam epitaxial material was investigated at low temperatures. The rate- and temperature-dependent measurements were explained in terms of a segregation model which related the surface segregation to surface diffusion. The model was found to offer a quantitative explanation for much of the available data on segregation at the surfaces of Si, Ge and GaAs.

J.F.Nützel, G.Abstreiter: Physical Review B, 1996, 53[20], 13551-8