The injection of interstitials during the annealing of non-amorphizing Si implants was monitored by using sharply defined B-doped marker layers that had been grown by means of reduced-pressure chemical vapor deposition. The enhancement of B diffusivity which was measured during the initial annealing stage (up to 15s, 700C) was at least one order of magnitude greater than the enhancement which occurred during subsequent annealing. The high supersaturation of interstitials during the early stages of annealing led to the immobilization of B down to concentrations of about 1017/cm3. This was consistent with interstitial-driven B clustering. It was concluded that the ultra-fast diffusion set lower limits, on the Si and B interstitial diffusivities (700C), of 2 x 10-10 and 2 x 10-13cm2/s, respectively.

H.G.A.Huizing, C.C.G.Visser, N.E.B.Cowern, P.A.Stolk, R.C.M.De Kruif: Applied Physics Letters, 1996, 69[9], 1211-3

Memorandum: P in Si

950-1235C, D(cm2/s) = 10.5 exp[-3.69(eV)/kT] (Journal of Applied Physics, 1956, 27, 544); 820-1100C, D(cm2/s) = 2.49 x 10-5 exp[-2.0(eV)/kT] (Proceedings of the IEEE, 1969, 57, 1499); 820-1100C, D(cm2/s) = 49.3 exp[-3.77(eV)/kT] (Proceedings of the IEEE, 1969, 57, 1499); 850-1150C, D(cm2/s) = 6 x 10-6, exp[-1.90(eV)/kT] (Electrochemical Technology, 1968, 6, 361); 1127-1327C, D(cm2/s) = 0.05 exp[-3.3(eV)/kT] (Applied Physics Letters, 1970, 17, 137); 1130-1405C, D(cm2/s) = 0.074 exp[-3.30(eV)/kT] (Physical Review B, 1971, 3, 389); 1100-1250C, D(cm2/s) = 20.33 exp[-3.87(eV)/kT] (Solid-State Electronics, 1972, 15, 1113); 950-1200C, D(cm2/s) = 5.3 exp[-3.69(eV)/kT] (Journal of Applied Physics, 1971, 42, 3750); 950-1200C, D(cm2/s) = 0.39 exp[-3.12(eV)/kT] (Journal of Applied Physics, 1971, 42, 3750); 767-1227C, D(cm2/s) = 5.7 exp[-3.75(eV)/kT] (Journal of Applied Physics, 1993, 73, 699)