It was found that high-intensity (9W/cm2) red-light soaking (120h) of amorphous hydrogenated material at 65C yielded no detectable H diffusion in tracer experiments. A new upper bound on the light-induced diffusion coefficient was found at a temperature that was so low that thermal diffusion was negligible. The null result which was found here was incompatible with models in which H emission from Si-H bonds was assumed to be proportional to both the light intensity and the metastable defect creation rate.

However, this result was compatible with a model in which both H emission and metastable defect creation were proportional to the product of the free electron and hole densities. This implied that fewer than 500 H emissions occurred per metastable defect that was created

H.M.Branz, J.Bullock, S.Asher, H.Gleskova, S.Wagner: Journal of Non-Crystalline Solids, 1996, 198-200[1], 441-4

Memorandum: H in Si

967-1207C, D(cm2/s) = 0.0094 exp[-0.48(eV)/kT] (Physica, 1956, 22, 849); 250-500C, D(cm2/s) = 0.001 exp[-1.4(eV)/kT] (Journal of Non-Crystalline Solids, 1983, 59-60, 169); 80-100C, D(cm2/s) = 0.000042 exp[-0.56(eV)/kT] (Physica Status Solidi A, 1989, 113, K9); 225-350C, D(cm2/s) = 1.7 x 102 exp[-1.2(eV)/kT] (Materials Science Forum, 1992, 83-87, 87); 220-270K, D(cm2/s) = 0.07 exp[-0.54(eV)/kT] (Applied Physics Letters, 1991, 59, 3165)

Compensation Chart: H in Si

(vertical axis shifted by arbitrary factor)