The depth-dependent nitridation-enhanced diffusion of Sb was investigated by the annealing (810 to 910C, 0.25 to 2h) of (100) doping superlattice structures in NH3. These multi-layered doping superlattices consisted of six 10nm-wide Sb doping spikes that were spaced 100nm apart. The nitridation-enhanced diffusion of Sb, which was attributed to vacancy injection, indicated vacancy supersaturation values of 3 to 5. On the basis of the spatial decay of Sb nitridation-enhanced diffusion, lower bounds on vacancy diffusivities were deduced. They were equal to 7.9 x 10-14, 1.2 x 10-12 and 2.1 x 10-11cm2/s at 810, 860 and 910C, respectively. Evidence was found for a trap-limited vacancy diffusivity.

T.K.Mogi, M.O.Thompson, H.J.Gossmann, J.M.Poate, H.S.Luftman: Applied Physics Letters, 1996, 69[9], 1273-5

Memorandum: Sb in Si

1095-1380C, D(cm2/s) = 5.6 exp[-3.95(eV)/kT] (Journal of Applied Physics, 1956, 27, 544); 1190-1398C, D(cm2/s) = 12.9 exp[-3.98(eV)/kT] (Journal of the Electrochemical Society, 1959, 106, 705); 1150-1250C, D(cm2/s) = 363 exp[-4.41(eV)/kT] (Journal of the Electrochemical Society of Japan, 1968, 36, 3); 1190-1405C, D(cm2/s) = 0.214 exp[-3.65(eV)/kT] (Physical Review B, 1971, 3, 397); 1000-1150C, D(cm2/s) = 9700 exp[-4.87(eV)/kT] (Japanese Journal of Applied Physics, 1979, 18, 2181); 1000-1150C, D(cm2/s) = 365 exp[-4.44(eV)/kT] (Japanese Journal of Applied Physics, 1979, 18, 2181); 1000-1150C, D(cm2/s) = 143 exp[-4.30(eV)/kT] (Japanese Journal of Applied Physics, 1979, 18, 2181); 930-1150C, D(cm2/s) = 13.46 exp[-3.9(eV)/kT] (Physica Status Solidi A, 1985, 89, 105)