A transmission electron microscopic study was made of (111) wafers which had been implanted with Ti ions, and then annealed at 950C. It was found that the as-implanted wafers contained a Ti-rich amorphous surface layer with embedded silicides of a crystalline form of TiSi2 that had not been previously reported. Below this layer was a Ti-poor crystalline layer which exhibited extensive radiation damage. The annealed layers contained large incoherent islands of C54 TiSi2, with a layered .microstructure in the Si between them that consisted of twins, then topotaxial silicides, and then dislocation loops. It was proposed that this microstructure arose from silicide growth before epitaxial re-growth. In continuous epitaxial films which had been observed previously at lower annealing temperatures, epitaxial re-growth had preceded silicide development.

S.Jin, M.Aindow, Z.Zhang, L.J.Chen: Journal of Materials Research, 1995, 10[4], 891-