The implantation of 60keV Si ions to a dose of 1014/cm2 was used to introduce excess interstitials into material which had been pre-doped with high (1018 or 1019/cm3) background B concentrations. Post-implantation annealing (740C, 0.25h) permitted the agglomeration of the available interstitials into elongated {311} defects. The density of the agglomerated interstitials was then determined by means of plan-view transmission electron microscopy. An appreciable reduction in the fraction of excess interstitials which was trapped in {311} defects occurred as a function of the B concentration, and the {311} defects almost completely disappeared at a B concentration of 1019/cm3. The reduction in the excess interstitial concentration was explained in terms of B-interstitial clustering.

T.E.Haynes, D.J.Eaglesham, P.A.Stolk, H.J.Gossmann, D.C.Jacobson, J.M.Poate: Applied Physics Letters, 1996, 69[10], 1376-8