The generation and annealing of point defects in crystals under high-energy heavy-ion implantation was studied for the case where the electronic stopping power considerably exceeded the nuclear stopping power, and was of the order of 10 to 20keV/nm. A study was made here of the effect of high-energy heavy-ion implantation upon the reconstruction of defects which had been introduced into crystalline samples.

I.V.Antonova, A.V.Dvurechenskii, A.A.Karanovich, A.V.Rybin, S.S.Swaimeev: Physica Status Solidi A, 1995, 147[1], K1-3