A deep-level transient spectroscopic and recombination lifetime investigation was made of the passivation of Fe-related hole traps in p-type material. After H ion implantation (1014 to 1016/cm2), all of the deep-level transient spectroscopic peaks that were related to Fe impurities disappeared. This indicated that implanted H passivated the Fe-B pair, as well as other Fe-related hole traps that were not passivated by H plasma treatment. On the other hand, 2 types of hole trap were produced (Ev + 0.23, Ev + 0.38eV) by H ion implantation. The recombination lifetime increased from 3 to 18s (some 45% of the lifetime in uncontaminated samples) with increasing implantation dose. The maximum value of the recombination lifetime was found at a dose of 1016/cm2. A decrease in the recombination lifetime, in more heavily implanted samples (1016/cm2), was attributed to hole traps that were created by the ion implantation.

M.Kouketsu, S.Isomae: Journal of Applied Physics, 1996, 80[3], 1485-7