A study was made of As+-implanted junctions which had been annealed at temperatures as low as 450C. Two-step implantation/annealing experiments were carried out and the spatial distribution of the end-of-range defects was investigated. It was demonstrated that the residual damage in junctions which had been annealed at 450C was strongly affected by the doping level of the p-type material. The defects were found to be deeply distributed in the substrate. For example, they were about 350nm below the surface when the doping level was 2.5 x 1015/cm3. The defect distribution extended further at higher B doping levels.

A.Nakada, M.M.Oka, Y.Tamai, T.Shibata, T.Ohmi: Journal of Applied Physics, 1996, 80[3], 1594-9